题目
EESM5200 (L1) Part I: Topic 9 - Optical Properties of PN Junction
单项选择题
A reverse bias is applied to a PN junction and a light is shined onto it. Assume the energy of the light is close to the bandgap of the semiconductor material. Which of the following change is likely to give to largest increase the magnitude of the reverse current of the PN junction?
选项
A.Increase the wavelength of the incident light
B.Decrease the wavelength of the incident light
C.Increase the magnitude of the reverse bias voltage
D.Decrease the magnitude of the reverse bias voltage
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标准答案
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思路分析
This question asks which change would most strongly increase the reverse current of a PN junction when illuminated with light near the bandgap.
Option 1: Increase the wavelength of the incident light. As the wavelength increases, the photon energy E = hv decreases. If the photon energy falls closer to or below the bandgap, fewer photons have enough energy to generate electron-hole pairs, so the generation rate and thus the photocurrent in reverse bias would tend to decrease. In short, longer wavelengt......Login to view full explanation登录即可查看完整答案
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