题目
EESM5200 (L2) Part I: Topic 10 - Metal Semiconductor Contact
多项选择题
In a Schottky barrier contact between a metal and an n-silicon. If the doping concentration of the n region is halved, which of the following statement is/are correct?
选项
A.The depletion width increases
B.The depletion width decreases
C.The built-in potential increases
D.The built-in potential decreases
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标准答案
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思路分析
When the n-region doping concentration Nd is halved in a Schottky barrier, several interrelated quantities change.
Option 1: The depletion width increases
- The depletion width W in a Schottky contact at zero or small bias is proportional to sqrt(εs Vb / q Nd), where Vb is the built-in potential. Reducing Nd tends to widen th......Login to view full explanation登录即可查看完整答案
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