题目
EESM5200 (L1) Part I: Topic 6 - Carrier Actions in a PN Junction
单项选择题
Assume you have a P+/N junction that both the P+ side and the N side are short. Which of the following change (which assume the diode remains as a short P+/N diode after the change) will lead to the highest increase in current
选项
A.increase the P+ region length
B.reduce the P+ region length
C.increase the N region length
D.reduce the N region length
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标准答案
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思路分析
When analyzing a P+/N junction that is effectively shorted (the diode behaves like a short circuit across the junction), the current is primarily governed by the series resistance along the current path through the doped regions. Changing the physical length of the conducting regions changes this series resistance.
Option 1: increase the P+ region length. Making the heavily doped P+ side longer increases the distanc......Login to view full explanation登录即可查看完整答案
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The following figure shows the electron and hole currents along the position at the n-side of a PN junction. In the figure, the depletion width is very small and not observable. Assume the diffusion coefficient and diffusion length for holes and electrons are the same (i.e. Dp=Dn and Lp=Ln). Also take kT/q=0.025V, the n-side doping concentration is ND=1x1016cm-3 and the forward voltage is 0.5V in this problem. Calculate the following (up to 3 significant digits if the answer is not a round number): 1) What is the hole current at the edge of n-side depletion region in mA? [Fill in the blank], mA 2) What is the p-side doping concentration of the PN junction? [Fill in the blank], cm-3 3) What is the new total diode current in mA if the n-side doping is increased by 10 times? [Fill in the blank], mA
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